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tm october 2006 FDMC6890NZ dual n-channel powertrench ? mosfet ?2006 fairchild semiconductor corporation FDMC6890NZ rev.c www.fairchildsemi.com 1 FDMC6890NZ dual n-channel powertrench ? mosfet 20v, 4a, q1:68m ?, q2:100m ? features q1: n-channel ? max r ds(on) = 68m ? at v gs = 4.5v, i d = 4a ? max r ds(on) = 100m ? at v gs = 2.5v, i d = 3a q2: n-channel ? max r ds(on) = 100m ? at v gs = 4.5v, i d = 4a ? max r ds(on) = 150m ? at v gs = 2.5v, i d = 2a ? low gate charge ? rohs compliant general description FDMC6890NZ is a compact single package solution for dc to dc converters with excellent thermal and switching characteristics. inside the power 33 package features two n-channel mosfets with low on-state resistance and low gate charge to maximize the power conversion and switching efficiency. the q1 switch also integrates gate protection from unclamped voltage input. application ? dc - dc conversion mosfet maximum ratings t a = 25c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter q1 q2 units v ds drain to source voltage 20 20 v v gs gate to source voltage 12 12 v i d -continuous 4 a -pulsed 10 p d power dissipation (steady state) q1 (note 1a) 1.92 w power dissipation (steady state) q2 1.78 t j , t stg operating and storage junction temperature range -55 to +150 c r ja thermal resistance, junction to ambient q1 (note 1a) 65 c/w r ja thermal resistance, junction to ambient q2 70 device marking device package reel size tape width quantity 6890n FDMC6890NZ power 33 7inch 8mm 3000 units s1 g1 d1/s2 g2 d1/s2 d2 s1 d1/s2 d2 g1 g2 up bottom d1/s2 d1 d2 5 1 6 2 3 4 g2 d2 d1/s2 s1 g1 d1/s2 power 33
FDMC6890NZ dual n-channel powertrench ? mosfet FDMC6890NZ rev.c www.fairchildsemi.com 2 electrical characteristics t j = 25c unless otherwise noted symbol parameter test conditions type min typ max units off characteristics bv dss drain to source breakdown voltage i d = 250 p a, v gs = 0v q1 q2 20 20 v ' bv dss ' t j breakdown voltage temperature coefficient i d = 250 p a, referenced to 25 c q1 q2 13 12 mv/ c i dss zero gate voltage drain current v ds = 16v, v gs = 0v q1 q2 1 1 p a i gss gate to source leakage current v gs = 12v, v ds = 0v q1 q2 10 100 p a na on characteristics v gs(th) gate to source threshold voltage v gs = v ds , i d = 250 p a q1 q2 0.6 0.6 0.9 1.0 2 2 v ' v gs(th) ' t j gate to source threshold voltage temperature coefficient i d = 250 p a, referenced to 25 c q1 q2 -3 -3 mv/ c r ds(on) drain to source on resistance v gs = 4.5v, i d = 4a v gs = 2.5v, i d = 3a q1 58 77 68 100 m : v gs = 4.5v, i d = 4a v gs = 2.5v, i d = 2a q2 67 102 100 150 g fs forward transconductance v ds = v, i d =4a q1 q2 10 7 s dynamic characteristics c iss input capacitance v ds = 10v, v gs = 0v, f= 1mhz q1 q2 205 190 270 250 pf c oss output capacitance q1 q2 60 60 80 80 pf c rss reverse transfer capacitance q1 q2 40 35 60 55 pf r g gate resistance f = 1mhz q1 q2 3.3 2.8 : switching characteristics t d(on) turn-on delay time v dd = 10v, i d = 4a, r gen = 6 : q1 q2 4 4 10 10 ns t r rise time q1 q2 13 12 22 21 ns t d(off) turn-off delay time q1 q2 10 7 19 14 ns t f fall time q1 q2 6 6 12 12 ns q g(tot) total gate charge at 4.5v v gs = 0v to 4.5v v dd = 10 v i d = 4a q1 q2 2.4 1.8 3.4 2.6 nc q g(2) total gate charge at 2v q1 q2 1.4 0.6 1.9 0.8 nc q gs gate to source gate charge q1 q2 0.4 0.5 nc q gd gate to drain ?miller? charge q1 q2 0.9 0.8 nc
FDMC6890NZ dual n-channel powertrench ? mosfet FDMC6890NZ rev.c www.fairchildsemi.com 3 electrical characteristics t j = 25c unless otherwise noted drain-source diod e characteristics symbol parameter test conditions type min typ max units v sd source to drain diode forward voltage v gs = 0v, i s = 4a q1 q2 0.94 0.92 1.25 1.25 v t rr reverse recovery time i f = 4a, di/dt = 100a/s q1 q2 18 17 27 26 ns q rr reverse recovery charge q1 q2 9 10 14 15 nc notes: 1: r ja is determined with the device mounted on a 1in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of fr-4 material. r jc is guaranteed by design while r ca is determined by the user's board design. 2: pulse test: pulse width < 30 0 s, duty cycle < 2.0%. a. 65c/w when mounted on a 1 in 2 pad of 2 oz copper b. 150c/w when mounted on a minimum pad of 2 oz copper
FDMC6890NZ dual n-channel powertrench ? mosfet FDMC6890NZ rev.c www.fairchildsemi.com 4 typical characteristics (q1 n-channel) t j = 25c unless otherwise noted figure 1. 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 2 4 6 8 10 12 v gs = 4.5v pulse duration = 80 p s duty cycle = 0.5%max v gs = 1.8v v gs = 2.5v i d , drain current (a) v ds , drain to source voltage (v) on-region characteristics figure 2. 024681012 0.5 1.0 1.5 2.0 2.5 3.0 pulse duration = 80 p s duty cycle = 0.5%max normalized drain to source on-resistance i d , drain current(a) v gs = 2.5v v gs = 1.8v v gs = 4.5v n o r m a l i z e d o n - r e s i s t a n c e vs drain current and gate voltage f i g u r e 3 . n o r m a l i z e d o n - r e s i s t a n c e -50 -25 0 25 50 75 100 125 150 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 i d = 4a v gs = 4.5v normalized drain to source on-resistance t j , junction temperature ( o c ) vs junction temperature figure 4. 1.5 2.0 2.5 3.0 3.5 4.0 4.5 40 80 120 160 200 pulse duration = 80 p s duty cycle = 0.5%max t j = 150 o c t j = 25 o c i d = 4a r ds(on) , drain to source on-resistance ( m : ) v gs , gate to source voltage (v) o n - r e s i s t a n c e v s g a t e t o source voltage figure 5. transfer characteristics 0.00.51.01.52.02.5 0 1 2 3 4 5 6 7 8 9 pulse duration = 80 p s duty cycle = 0.5%max t j = -55 o c t j = 25 o c t j = 150 o c i d , drain current (a) v gs , gate to source voltage (v) figure 6. 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1e-3 0.01 0.1 1 10 t j = -55 o c t j = 25 o c t j = 150 o c v gs = 0v i s , reverse drain current (a) v sd , body diode forward voltage (v) 20 s o u r c e t o d r a i n d i o d e forward voltage vs source current
FDMC6890NZ dual n-channel powertrench ? mosfet FDMC6890NZ rev.c www.fairchildsemi.com 5 figure 7. 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 v dd = 12v v dd = 10v v dd = 8v q g , gate charge(nc) v gs , gate to source voltage(v) gate charge characteristics figure 8. 0.1 1 10 100 400 20 f = 1mhz v gs = 0v capacitance (pf) v ds , drain to source voltage (v) c rss c oss c iss 20 c a p a c i t a n c e v s d r a i n to source voltage figure 9. 0.01 0.1 1 10 1 2 3 4 5 6 t j = 25 o c t j = 125 o c t av , time in avalanche(ms) i as , avalanche current(a) 1 u n c l a m p e d i n d u c t i v e switching capability figure 10. 0.1 1 10 0.01 0.1 1 10 dc 10s 1s 100ms 10ms 1ms 100us single pulse t j = max rated t a = 25 o c operation in this area may be limited by r ds(on) v ds , drain to source voltage (v) i d , drain current (a) 60 20 f o r w a r d b i a s s a f e operating area figure 11. single pulse maximum power dissipation 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 1 10 100 0.5 v gs = 10v single pulse p ( pk ) , peak transient power (w) t, pulse width (s) t a = 25 o c i = i 25 for temperatures above 25 o c derate peak current as follows: 150 t a ? 125 ----------------------- - typical characteristics (q1 n-channel) t j = 25c unless otherwise noted
FDMC6890NZ dual n-channel powertrench ? mosfet FDMC6890NZ rev.c www.fairchildsemi.com 6 figure 12. transient thermal response curve 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 0.01 0.1 1 0.006 duty cycle-descending order normalized thermal impedance, z t ja t, rectangular pulse duration (s) d = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse 2 p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z t ja x r t ja + t a typical characteristics (q1 n-channel) t j = 25c unless otherwise noted
FDMC6890NZ dual n-channel powertrench ? mosfet FDMC6890NZ rev.c www.fairchildsemi.com 7 typical characteristics (q2 n-channel) 0.0 0.5 1.0 1.5 2.0 2.5 0 2 4 6 8 10 v gs = 4.5v pulse duration = 80 p s duty cycle = 0.5%max v gs = 1.8v v gs = 2.5v i d , drain current (a) v ds , drain to source voltage (v) figure 13. s drain current and gate voltage figure 15. normalized on resistance vs junction temperature -50 -25 0 25 50 75 100 125 150 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 i d = 4a v gs = 4.5v normalized drain to source on-resistance t j , junction temperature ( o c ) 23456 40 80 120 160 200 pulse duration = 80 p s duty cycle = 0.5%max t j = 150 o c t j = 25 o c i d = 4a r ds(on) , drain to source on-resistance ( m : ) v gs , gate to source voltage (v) figure 16. on-resistance vs gate to source voltage figure 17. transfer characteristics 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 1 2 3 4 5 6 pulse duration = 80 p s duty cycle = 0.5%max t j = -55 o c t j = 25 o c t j = 150 o c i d , drain current (a) v gs , gate to source voltage (v) figure 18. source to drain diode forward voltage vs source current 0.2 0.4 0.6 0.8 1.0 1.2 1e-3 0.01 0.1 1 10 t j = -55 o c t j = 25 o c t j = 150 o c v gs = 0v i s , reverse drain current (a) v sd , body diode forward voltage (v) 20
typical characteristics figure 19. gate ch arge characteristics 0.0 0.4 0.8 1.2 1.6 2.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 v dd = 12v v dd = 10v v dd = 8v q g , gate charge(nc) v gs , gate to source voltage(v) 0.1 1 10 100 400 20 f = 1mhz v gs = 0v capacitance (pf) v ds , drain to source voltage (v) c rss c oss c iss 20 figure 20. capacitance vs drain to source voltage figure 21. unclamped inductive switching capability 1e-3 0.01 0.1 1 1 2 3 4 5 6 t j = 25 o c t j = 125 o c t av , time in avalanche(ms) i as , avalanche current(a) 1 f i g u r e 2 2 . f o r w a r d b i a s s a f e operating area 0.1 1 10 0.01 0.1 1 10 dc 10s 1s 100ms 10ms 1ms 100us single pulse t j = max rated t a = 25 o c operation in this area may be limited by r ds(on) v ds , drain to source voltage (v) i d , drain current (a) 60 20 figure 23. single pulse maximum power dissipation 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 1 10 100 v gs = 10v single pulse p ( pk ) , peak transient power (w) t, pulse width (s) 200 t a = 25 o c i = i 25 for temperatures above 25 o c derate peak current as follows: 150 t a ? 125 ----------------------- - FDMC6890NZ dual n-channel powertrench ? mosfet FDMC6890NZ rev.c www.fairchildsemi.com 8
typical characteristics figure 24. transient thermal response curve 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 1e-3 0.01 0.1 1 duty cycle-descending order normalized thermal impedance, z t ja t, rectangular pulse duration (s) d = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse 2 p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z t ja x r t ja + t a FDMC6890NZ dual n-channel powertrench ? mosfet FDMC6890NZ rev.c www.fairchildsemi.com 9
FDMC6890NZ dual n-channel powertrench ? mosfet FDMC6890NZ rev.c www.fairchildsemi.com 10
FDMC6890NZ rev. c www.fairchildsemi.com 11 FDMC6890NZ dual n-channel powertrench ? mosfet rev. i20 trademarks the following are registered and unregistered trademarks fairchil d semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume an y liability arising out of the application or use of any product or circuit described here in; neither does it convey any lice nse under its patent rights, nor the rights of others. these specifications do not expand th e terms of fairchild?s worldwide terms and conditions, specifically the warranty therei n, which covers these products. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to per form can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms acex? activearray? bottomless? build it now? coolfet? crossvolt ? dome? ecospark? e 2 cmos? ensigna? fact? fast ? fastr? fps? frfet? fact quiet series? globaloptoisolator? gto? hisec? i 2 c? i-lo ? implieddisconnect ? intellimax? isoplanar? littlefet? microcoupler? microfet? micropak? microwire? msx ? msxpro ? ocx ? ocxpro ? optologic ? optoplanar? pacman? pop? power247? poweredge? powersaver? powertrench ? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure ? rapidconnect ? serdes ? scalarpump ? silent switcher ? smart start? spm? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? tcm? tinyboost? tinybuck? tinypwm? tinypower? tinylogic ? tinyopto? trutranslation? uhc? unifet? ultrafet ? vcx? wire? across the board. around the world. ? the power franchise ? programmable active droop? datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. spec ifications may change in any manner without notice. preliminary first production this datas heet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. no identification needed full production this datas heet contains final spec ifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. obsolete not in production this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only.

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